SEDL / STP / STP1117-EB / STP26509S



Angular Dependence of Thin-Film Dielectric Coating Damage Thresholds Revisited

Boyer, JD
Los Alamos National Laboratory, Los Alamos,New Mexico

Foltyn, SR
Los Alamos National Laboratory, Los Alamos,New Mexico

Mauro, BR
Los Alamos National Laboratory, Los Alamos,New Mexico

Sanders, VE
Los Alamos National Laboratory, Los Alamos,New Mexico


Pages: 8    Published: Jan 1990


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Source: STP1117-EB


Abstract

Newnam et al. [1] reported experiments showing that the angular dependence of 351-nm laser damage thresholds in HfO2/SiO2 multilayer dielectric reflectors was much weaker than even the 1/cosθ expected from simple geometric fluence dilution. Several plausible explanations were suggested, but none were convincing. We propose a simple geometric model based on a cylindrical form for the coating defect responsible for damage initiation. We have measured 248-nm damage thresholds for bare fused silica, evaporated aluminium films, and HfO2/SiO2 and Al2O3/SiO2 dielectric reflectors at angles out to 85°. The measured data agree well with our simple model.


Keywords:
angular dependence, aluminium oxide, coating defects, evaporated aluminium, fused silica, hafnium oxide, laser damage thresholds, multilayer dielectric reflectors, silicon dioxide

Paper ID: STP26509S
Committee/Subcommittee: E13.15
DOI: 10.1520/STP26509S
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