SEDL / STP / STP1117-EB / STP26508S

Laser Induced Damage Thresholds of Dielectric Coatings at 193 nm and Correlations to Optical Constants and Process Parameters

Kolbe, J
Institut für Quantenoptik, Universität Hannover, Hannover,

Müller, H
Institut für Quantenoptik, Universität Hannover, Hannover,

Schink, H
Institut für Quantenoptik, Universität Hannover, Hannover,

Welling, H
Institut für Quantenoptik, Universität Hannover, Hannover,

Ebert, J
Institut für Quantenoptik, Universität Hannover, Hannover,

Pages: 13    Published: Jan 1990

Download this paper for $25 PDF (228K)          View License Agreement
Abstract

Laser-induced damage thresholds of dielectric single layers and reflectors were measured at 193 nm. Layers of Al²O³ and SiO² were prepared by electron beam evaporation and by ion beam sputtering; layers of NaF, AlF³, MgF², GdF³, LaF³, NdF³ and YF³ were prepared by thermal evaporation. Spectrophotometric methods were used to evaluate optical constants and inhomogeneity coefficients in the spectral range between 150 nm and 250 nm. The dependence of refractive indices and absorption coefficients on process parameters and deposition methods was analyzed in order to prepare low loss reflectors for 193 nm and 157 nm.