STP1117: Laser Induced Damage Thresholds of Dielectric Coatings at 193 nm and Correlations to Optical Constants and Process Parameters

    Kolbe, J
    Institut für Quantenoptik, Universität Hannover, Hannover,

    Müller, H
    Institut für Quantenoptik, Universität Hannover, Hannover,

    Schink, H
    Institut für Quantenoptik, Universität Hannover, Hannover,

    Welling, H
    Institut für Quantenoptik, Universität Hannover, Hannover,

    Ebert, J
    Institut für Quantenoptik, Universität Hannover, Hannover,

    Pages: 13    Published: Jan 1990


    Abstract

    Laser-induced damage thresholds of dielectric single layers and reflectors were measured at 193 nm. Layers of Al2O3 and SiO2 were prepared by electron beam evaporation and by ion beam sputtering; layers of NaF, AlF3, MgF2, GdF3, LaF3, NdF3 and YF3 were prepared by thermal evaporation. Spectrophotometric methods were used to evaluate optical constants and inhomogeneity coefficients in the spectral range between 150 nm and 250 nm. The dependence of refractive indices and absorption coefficients on process parameters and deposition methods was analyzed in order to prepare low loss reflectors for 193 nm and 157 nm.

    Keywords:

    fluoride layers, UV coatings, UV laser damage, excimer laser mirrors, ion-beam sputtered UV coatings, UV losses in dielectric layers


    Paper ID: STP26508S

    Committee/Subcommittee: E13.15

    DOI: 10.1520/STP26508S


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