STP1117

    Laser Conditioning of Optical Thin Films

    Published: Jan 1990


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    Abstract

    Results are presented that show the damage thresholds of e-beam deposited multilayer HfO2/SiO2 thin films can be permanently increased by a factor of 2 to 3 by illumination with subthreshold fluences of laser light. This sub-threshold illumination procedure is referred to as “laser conditioning”. The films used in this study were prepared by three different physical-vapor-deposition techniques: ion-beam sputtering, plasma plating and e-beam evaporation. Only the e-beam deposited films showed consistent and significant improvement with laser conditioning. Of the material pairs examined (HfO2/SiO2, ZrO2/SiO2 and TiO2/SiO2), HfO2/SiO2 gave the greatest and most consistent damage improvement with conditioning. The number of layers and the reflective or transmissive characteristics of the HfO2/SiO2 films were found to have little impact on laser conditioning of the film. The results show that the damage thresholds of a wide range of e-beam deposited coatings (e.g. HR's, polarizers, etc.) can be improved by laser conditioning. Several possible conditioning mechanisms are examined.

    Keywords:

    “annealing”, band-gap states, conditioning, damage, damage thresholds, dielectric oxides, laser conditioning, laser damage, optical thin films, paramagnetic states, point defects


    Author Information:

    Wolfe, CR
    University of California Lawrence Livermore National Laboratory, Livermore, CA

    Kozlowski, MR
    University of California Lawrence Livermore National Laboratory, Livermore, CA

    Campbell, JH
    University of California Lawrence Livermore National Laboratory, Livermore, CA

    Rainer, F
    University of California Lawrence Livermore National Laboratory, Livermore, CA

    Morgan, AJ
    University of California Lawrence Livermore National Laboratory, Livermore, CA

    Gonzales, RP
    University of California Lawrence Livermore National Laboratory, Livermore, CA


    Paper ID: STP26504S

    Committee/Subcommittee: E13.15

    DOI: 10.1520/STP26504S


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