STP1117: Laser Induced Damage to Thallium Arsenic Selenide (TAS)

    Said, AA
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Sheik-Bahae, M
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Soileau, MJ
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Van Stryland, EW
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Singh, NB
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Henningsen, T
    Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando, FL

    Pages: 4    Published: Jan 1990


    Abstract

    We present results of a study of the laser induced damage thresholds of Tl3AsSe3 at 10 μm using nanosecond and picosecond pulses. The damage threshold was found to be ≃10 J/cm2 with 130 ns (FWHM) and no damage was observed using 60 ps pulses.

    Keywords:

    damage threshold, CO, 2, laser, nonlinear crystals, TAS, SHG


    Paper ID: STP26477S

    Committee/Subcommittee: E13.15

    DOI: 10.1520/STP26477S


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