SEDL / STP / STP1117-EB / STP26477S

Laser Induced Damage to Thallium Arsenic Selenide (TAS)

Said, AA
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Sheik-Bahae, M
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Soileau, MJ
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Van Stryland, EW
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Singh, NB
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Henningsen, T
Center for Research in Electro-Optics and Lasers (CREOL) University of Central Florida, Orlando,FL

Pages: 4    Published: Jan 1990

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Source: STP1117-EB

Abstract

We present results of a study of the laser induced damage thresholds of Tl³AsSe³ at 10 μm using nanosecond and picosecond pulses. The damage threshold was found to be ≃10 J/cm² with 130 ns (FWHM) and no damage was observed using 60 ps pulses.

Keywords:
damage threshold, CO, 2, laser, nonlinear crystals, TAS, SHG

Paper ID: STP26477S
Committee/Subcommittee: E13.15
DOI: 10.1520/STP26477S
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