SEDL / STP / STP990-EB / STP26054S



Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation

Derheimer, A
Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

Takamizawa, S
Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

Matlock, JH
Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.

Mollenkopf, H
Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.


Pages: 13    Published: Jan 1989


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Abstract

Electrically active contaminants have been successfully detected on the surface of substrates using an epitaxial layer for encapsulation. P-type <100> wafers were deliberately contaminated with phosphorus and aluminum. The substrates were then subjected to a modified epitaxial growth cycle to preserve the contaminant on the surface High frequency C-V dopant profiles were performed, and electrically active contaminants were detected.


Keywords:
CV method, epitaxial encapsulation, contaminants, Schottky diode, depletion layer width, semiconductor

Paper ID: STP26054S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26054S
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