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SEDL / STP / STP990-EB / STP26054S
Electrical Characterization of Electrically Active Surface Contaminants by Epitaxial Encapsulation
Derheimer, A Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.
Takamizawa, S Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.
Matlock, JH Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.
Mollenkopf, H Electrical Characterization R and D Engineermanager of Materials Characterization R and DVice-President of TechnologyTechnical Service Manager, SEH AmericaShin Etsu Handotai Company, LDT, VancouverGunma, Wash.
Pages: 13 Published: Jan 1989
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Abstract
Electrically active contaminants have been successfully detected on the surface of substrates using an epitaxial layer for encapsulation. P-type <100> wafers were deliberately contaminated with phosphorus and aluminum. The substrates were then subjected to a modified epitaxial growth cycle to preserve the contaminant on the surface High frequency C-V dopant profiles were performed, and electrically active contaminants were detected.
Keywords:
CV method, epitaxial encapsulation, contaminants, Schottky diode, depletion layer width, semiconductor
Paper ID: STP26054S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26054S
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