SEDL / STP / STP990-EB / STP26053S

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N⁺(100) Epitaxial Wafers

Wijaranakula, W
senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

Shimada, S
senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

Mollenkopf, H
senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

Matlock, JH
senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

Stuber, M
senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

Pages: 16    Published: Jan 1989

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Abstract

Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×10¹⁷ atoms/cm³, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N⁺ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wafers. The results indicate that both pre- and post-epitaxial annealing can improve oxygen precipitation and IG efficiency. The relationship between oxide breakdown, generation lifetime and bulk defect density is observed.