Digital Library / STP / STP990-EB / STP26053S

Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N+(100) Epitaxial Wafers
Wijaranakula, W
senior engineer, R&D Materials Characterization, WA

Shimada, S

Mollenkopf, H

Matlock, JH

Stuber, M

Pages: 16    Published: Jan 1989

Download this paper for $25 PDF (248K)          View License Agreement
        Click here to download the complete source publication for $60 PDF (6.8M)

Source: STP990-EB

Abstract

Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×1017 atoms/cm3, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N+ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wafers. The results indicate that both pre- and post-epitaxial annealing can improve oxygen precipitation and IG efficiency. The relationship between oxide breakdown, generation lifetime and bulk defect density is observed.

Keywords:
silicon epitaxy, oxygen precipitation, internal gettering

Paper ID: STP26053S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26053S
ASTM International is a member of CrossRef.