STP990: Effect of Pre- and Post-Epitaxial Annealing on Oxygen Precipitation and Internal Gettering in N/N+(100) Epitaxial Wafers

    Wijaranakula, W
    senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

    Shimada, S
    senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

    Mollenkopf, H
    senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

    Matlock, JH
    senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

    Stuber, M
    senior engineerapplication engineerdepartment managerVice President of Technologyprocess engineer, R&D Materials CharacterizationSEH America, Inc.UNISYS, Corp., VancouverSan Diego, WACA

    Pages: 16    Published: Jan 1989


    Abstract

    Oxygen precipitation in silicon heavily-doped with antimony, particularly at the concentration range higher than 7×1017 atoms/cm3, is known to be severely suppressed because of the doping concentration effect. This results in a reduction in internal gettering (IG) efficiency in the N/N+ epitaxial wafers. In this work, substrate wafers heavily-doped with antimony were pre-annealed prior to the epitaxial deposition process. Post-epitaxial annealing was used for enhancing precipitation in asdeposited epitaxial wafers. The results indicate that both pre- and post-epitaxial annealing can improve oxygen precipitation and IG efficiency. The relationship between oxide breakdown, generation lifetime and bulk defect density is observed.

    Keywords:

    silicon epitaxy, oxygen precipitation, internal gettering


    Paper ID: STP26053S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26053S


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