STP990

    Defect, Dopant, and Device Modification using Si(Ge,B) Epitaxy

    Published: Jan 1989


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    Abstract

    In order to eliminate strain and dislocation generation in heavily boron-doped epitaxial silicon films, co-doping with germanium, a strain counterbalancing element with a larger covalent radius has been utilized. By adjusting the ratios of germane and diborane in a dichlorosilane/hydrogen CVD reactor we can sequentially achieve extrinsic gettering (XG) using controlled introduction of interfacial misfit dislocations with Si(Ge), as well as buried, highly conducting Si(Ge,B) layers which are strain-free and lattice matched to the silicon substrate. It is now possible to perform “Defect Engineering” by strategically positioning singly, or in tandem, either XG or co-doped Si(Ge,B) layers. The p++ layers act as recombination zones or buried field plates to suit the needs of MOS latch-up control, high speed and radiation hard devices, as well as providing defect free p++ etch stops for thin membranes and three-dimensional silicon structures. A variety of these epitaxial structures have been characterized using chemical etching and optical microscopy, X-ray topography and rocking curves, cross-section TEM, SEM/EBIC, SIMS, RBS and Spreading Resistance Profiling. An additional defect engineering program has been initiated in which individual misfit dislocations have been exposed and positioned under oxide mesas by anisotropically etching V-grooves in Si(Ge) XG samples. These structures will be used to examine the basic electrical properties of clean and decorated dislocations. More exotic applications for the creation of electrically useful misfit dislocations as active components in simple devices are being explored.

    Keywords:

    silicon epitaxy, co-doping, strain compensation, buried layers, misfit dislocations, chemical etching, micro-wires


    Author Information:

    Rozgonyi, GA
    Professor and graduate student, North Carolina State UniversityCentral Research Labs., Texas Instruments Inc.Advanced Products Group, Texas Instruments Inc., RaleighDallasSherman, NCTXTX

    Kola, RR
    Professor and graduate student, North Carolina State UniversityCentral Research Labs., Texas Instruments Inc.Advanced Products Group, Texas Instruments Inc., RaleighDallasSherman, NCTXTX

    Bean, KE
    Professor and graduate student, North Carolina State UniversityCentral Research Labs., Texas Instruments Inc.Advanced Products Group, Texas Instruments Inc., RaleighDallasSherman, NCTXTX

    Lindberg, K
    Professor and graduate student, North Carolina State UniversityCentral Research Labs., Texas Instruments Inc.Advanced Products Group, Texas Instruments Inc., RaleighDallasSherman, NCTXTX


    Paper ID: STP26052S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26052S


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