STP990

    Process - Induced Influence on the Minority — Carrier Lifetime in Power Devices

    Published: Jan 1989


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    Abstract

    Carrier lifetime has been studied as a function of process conditions for power semiconductor devices. The lifetime measurements have been done to see the influence of minority-carrier lifetime on device characteristics under different process conditions such as KOH etching, DI water rinse, deep diffusions, thermal oxidation, phosphorous diffusion and gold diffusion. Open Circuit Voltage Decay (OCVD) and Surface Photovoltage (SPV) techniques have been used to measure minority-carrier lifetime.

    It has been observed that the starting-wafer lifetime tends to change strongly during the course of fabrication processes and shows a dependence on the injection level. The typical curves show two-fold effects : (i) The effect of traps and (ii) The carrier density. The injection-level dependence of lifetime is attributed to heavy-doping effects in silicon, and in the absence of traps, is described by an empirical relationship.

    Keywords:

    OCVD, SPV, Ga/Al diffusion, Gettering, Gold diffusion, Shockley - Read-Hall recombination, minority-carrier traps


    Author Information:

    Khanna, VK
    research scientists, Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan

    Thakur, DK
    research scientists, Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan

    Jasuja, KL
    research scientists, Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan

    Khokle, WS
    research scientists, Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan


    Paper ID: STP26049S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26049S


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