STP990: Application of Total Reflection X-Ray Fluorescence Analysis for Metallic Trace Impurities on Silicon Wafer Surfaces

    Eichinger, P
    headsenior scientistresearch scientist, GeMeTec Gesellschaft für Meßtechnik und Technologie mbHWacker-Chemitronic GmbHGKSS Forschungszentrum, Institut für Physik, München 60Postfach 1140BurghausenGeesthacht,

    Rath, HJ
    headsenior scientistresearch scientist, GeMeTec Gesellschaft für Meßtechnik und Technologie mbHWacker-Chemitronic GmbHGKSS Forschungszentrum, Institut für Physik, München 60Postfach 1140BurghausenGeesthacht,

    Schwenke, H
    headsenior scientistresearch scientist, GeMeTec Gesellschaft für Meßtechnik und Technologie mbHWacker-Chemitronic GmbHGKSS Forschungszentrum, Institut für Physik, München 60Postfach 1140BurghausenGeesthacht,

    Pages: 9    Published: Jan 1989


    Abstract

    Total Reflection X-Ray Fluorescence Analysis (TXRF) is presented as a new analytical tool which allows to assess the metal contamination on silicon wafer surfaces in a non-destructive way. The technique uses a conventional X-Ray tube with a Mo anode, an energy-dispersive Si(Li) spectrometer, and an alignment set-up for the exact control of the angle of incidence which is kept below the critical angle for total reflection. Detection limits in the order of 100 ppm of a monoatomic layer are achieved e.g. for transistion metals. Application studies include plating of metals from a high purity liquid process chemical (BHF) and the adsorptivity of the silicon surface for Br originating from RCA type cleaning procedures.

    Keywords:

    silicon surface, trace impurities, X-ray fluorescence, total reflection, transition metals


    Paper ID: STP26047S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP26047S


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