SEDL / STP / STP990-EB / STP26046S


Advanced VLSI Isolation Technologies

Kuo, Y
IBM T.J. Watson Research Center, Yorktown Heights, N.Y.


Pages: 19    Published: Jan 1989


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Abstract

Common issues in VLSI isolation technologies have been identified. Based on these issues, a critical review of conventional and novel isolation technologies such as oxide, trench, SEG, SOS, SIMOX, and ZMR is presented in this paper.


Keywords:
VLSI, isolation, oxide isolation, trench isolation, SEG, SOI, SOS, SIMOX, ZMR

Paper ID: STP26046S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26046S
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