IBM T.J. Watson Research Center, Yorktown Heights, N.Y.
Pages: 19 Published: Jan 1989
Common issues in VLSI isolation technologies have been identified. Based on these issues, a critical review of conventional and novel isolation technologies such as oxide, trench, SEG, SOS, SIMOX, and ZMR is presented in this paper.
VLSI, isolation, oxide isolation, trench isolation, SEG, SOI, SOS, SIMOX, ZMR
Paper ID: STP26046S