STP990: Advanced VLSI Isolation Technologies

    Kuo, Y
    IBM T.J. Watson Research Center, Yorktown Heights, N.Y.

    Pages: 19    Published: Jan 1989


    Abstract

    Common issues in VLSI isolation technologies have been identified. Based on these issues, a critical review of conventional and novel isolation technologies such as oxide, trench, SEG, SOS, SIMOX, and ZMR is presented in this paper.

    Keywords:

    VLSI, isolation, oxide isolation, trench isolation, SEG, SOI, SOS, SIMOX, ZMR


    Paper ID: STP26046S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26046S


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