STP990: Advanced VLSI Isolation Technologies

    Kuo, Y
    IBM T.J. Watson Research Center, Yorktown Heights, N.Y.

    Pages: 19    Published: Jan 1989


    Common issues in VLSI isolation technologies have been identified. Based on these issues, a critical review of conventional and novel isolation technologies such as oxide, trench, SEG, SOS, SIMOX, and ZMR is presented in this paper.


    VLSI, isolation, oxide isolation, trench isolation, SEG, SOI, SOS, SIMOX, ZMR

    Paper ID: STP26046S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26046S

    CrossRef ASTM International is a member of CrossRef.