STP990: Crack Free and Highly Reliable Double Level Metallization Process Using Plasma Oxide and Silanol-Type Sog Layers

    Iwamori, T
    engineers, Electronic Imaging & Devices Research Lab. in Fuji Xerox Co., Ltd., Ebina,

    Sakata, Y
    engineers, Electronic Imaging & Devices Research Lab. in Fuji Xerox Co., Ltd., Ebina,

    Kojima, H
    engineers, Electronic Imaging & Devices Research Lab. in Fuji Xerox Co., Ltd., Ebina,

    Yatsuda, Y
    engineers, Electronic Imaging & Devices Research Lab. in Fuji Xerox Co., Ltd., Ebina,

    Pages: 14    Published: Jan 1989


    Abstract

    A double level metallization process using a sandwich structure of Plasma CVD(P-CVD) / Spin-On-Glass (SOG) / PSG oxide for an interlevel dielectric layer has been developed. A very thin phosphorus-doped silanol-type SOG is coated for planarization. The plasma-oxide which is deposited beneath the SOG film suppresses hillock growth in the 1st Al layer and together with the very thin coat of SOG prevents the SOG layer from cracking. Furthermore, silanol-type is found to be more reliable compared with siloxane-type. The surface topography is found to be planarized very well by cross-sectional SEM. The failures of 2nd Al open and short and short between 1st Al and 2nd Al are all negligible in our 2.0–1.3µm process proven by TEG (Test Element Group) evaluation. No problems have appeared in our reliability test program.

    Keywords:

    LSI, fabrication process, double level metallization, planarization, Spin-On-Glass (SOG)


    Paper ID: STP26044S

    Committee/Subcommittee: F01.17

    DOI: 10.1520/STP26044S


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