STP990: Plasma Etching of Aluminum Alloys in BCL3/CL2 Plasmas

    Chen, C-H
    managerprocess engineerVice President, Lam Research Corp.Marketing at Lam Research Corp., Fremont, CA

    DeOrnellas, S
    managerprocess engineerVice President, Lam Research Corp.Marketing at Lam Research Corp., Fremont, CA

    Burke, B
    managerprocess engineerVice President, Lam Research Corp.Marketing at Lam Research Corp., Fremont, CA

    Pages: 10    Published: Jan 1989


    Abstract

    Aluminum etching in BCl3/CL2 plasmas is characterized by studying the etch rate of aluminum and native aluminum oxide films as functions of reactant flow rates and rf power in a parallel plate plasma etcher. Results indicate that the etch rate is primarlly dependent upon the Cl2 concentration and is only slightly dependent upon the rf power used to sustain the discharge. Several additives are used to achieve the high resolution and anisotropic pattern required for aluminum alloys. Parametric studies support the roles of the additives have been made.

    Keywords:

    Aluminum etching, anisotropic profile, nitrogen mixing, spectral analysis, sheath voltage


    Paper ID: STP26039S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26039S


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