STP990

    Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride

    Published: Jan 1989


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    Abstract

    A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.

    The overall reaction is a complicated sequence of surface hydration and surface fluorination by adsorption, reaction, and product desorption. This paper presents two proposed reaction mechanisms and describes how experimental data from a laminar flow reactor were used to evaluate the mechanisms.

    Keywords:

    Silicon Dioxide Chemical Etching, Anhydrous Hydrogen Fluoride, Reaction Mechanisms


    Author Information:

    Clements, LD
    Professor and ChairGraduate Research AssistantJapan Process Engineering Manager, University of Nebraska - LincolnFSI International, LincolnChaska, NEMN

    Busse, JE
    Professor and ChairGraduate Research AssistantJapan Process Engineering Manager, University of Nebraska - LincolnFSI International, LincolnChaska, NEMN

    Mehta, J
    Professor and ChairGraduate Research AssistantJapan Process Engineering Manager, University of Nebraska - LincolnFSI International, LincolnChaska, NEMN


    Paper ID: STP26038S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26038S


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