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Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride
Clements, LD
Professor and Chair, University of Nebraska - Lincoln, NE

Busse, JE

Mehta, J

Pages: 20    Published: Jan 1989

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Source: STP990-EB

Abstract

A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.

The overall reaction is a complicated sequence of surface hydration and surface fluorination by adsorption, reaction, and product desorption. This paper presents two proposed reaction mechanisms and describes how experimental data from a laminar flow reactor were used to evaluate the mechanisms.

Keywords:
Silicon Dioxide Chemical Etching, Anhydrous Hydrogen Fluoride, Reaction Mechanisms

Paper ID: STP26038S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26038S
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