In this paper we examine the effect of dry etching on p-type and n-type material implanted with 11B+ at 100 keV to doses of 1E12, 1E13, 1E14, 1E15, and 1E16 cm−2. Hydrogen-containing etch chemistries and typical etch parameters are simulated by Ion Beam Etching with 100% deuterium. We show that for deuteration of 1E12 and 1E13 cm−2 11B+ implants into p-type material, deep deactivation, as is observed for unimplanted material, is suppressed but still observed. Deuteration of the same low dose 11B+ implants into n-type material expose two important results. The first is that hydrogen preferentially “pairs” with boron in a compensated n-type environment. The second is that hydrogen deactivates boron acceptors not only in the absence of free holes but even when the Fermi level is near the conduction band edge.