STP990

    Dry Etching of Ion Implanted Silicon: Electrical Effects

    Published: Jan 1989


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    Abstract

    In this paper we examine the effect of dry etching on p-type and n-type material implanted with 11B+ at 100 keV to doses of 1E12, 1E13, 1E14, 1E15, and 1E16 cm−2. Hydrogen-containing etch chemistries and typical etch parameters are simulated by Ion Beam Etching with 100% deuterium. We show that for deuteration of 1E12 and 1E13 cm−2 11B+ implants into p-type material, deep deactivation, as is observed for unimplanted material, is suppressed but still observed. Deuteration of the same low dose 11B+ implants into n-type material expose two important results. The first is that hydrogen preferentially “pairs” with boron in a compensated n-type environment. The second is that hydrogen deactivates boron acceptors not only in the absence of free holes but even when the Fermi level is near the conduction band edge.

    Keywords:

    dry etching, boron deactivation, ion beam etching, hydrogen/deuterium, implantation, reactive ion etching, plasma etching


    Author Information:

    Heddleson, JM
    graduate studentsAlumni Professor, Engineering Science Program and the Center for Electronic Materials and Devices at The Pennsylvania State University, University Park, PA

    Horn, MW
    graduate studentsAlumni Professor, Engineering Science Program and the Center for Electronic Materials and Devices at The Pennsylvania State University, University Park, PA

    Fonash, SJ
    graduate studentsAlumni Professor, Engineering Science Program and the Center for Electronic Materials and Devices at The Pennsylvania State University, University Park, PA


    Paper ID: STP26037S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26037S


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