SYMPOSIA PAPER Published: 01 January 1989
STP26036S

Dry Etching Techniques for MMIC Fabrication on GaAs

Source

During the fabrication of a GaAs monolithic microwave integrated circuit, there are a number of steps which necessitate the etching of GaAs, namely; mesa etching (for device isolation), gate recessing (to control the saturation current levels), substrate thinning for (transmission line impedance control), through substrate via holes (to reduce interconnection inductances) and scribe-line etching (for yield enhancement). Reproducible dry etch processes have been developed for these steps. However, the diversity of the process constraints imposed by these fabrication steps has led to a number of process operation regimes: for example, resulting in average etch rates ranging from less than 1000Å/min up to 10u/min for 2″ GaAs substrates. The process details are discussed with particular emphasis on the rate limiting steps and the factors governing the reactive gas/surface reaction rates.

Author Information

Bhardwaj, JK
Kiermasz, A
Stephens, MA
Harrington, SJ
McQuarrie, AD
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Details
Developed by Committee: F01
Pages: 159–173
DOI: 10.1520/STP26036S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5