STP990: Dry Etching Techniques for MMIC Fabrication on GaAs

    Bhardwaj, JK
    process and application engineersprocess manager, Electrotech Special Research Systems Ltd., Thornbury LaboratoriesE.T. Plasma Developments Ltd., Unit la Oldmixon Cresent, Oldmixon Trading Estate, BristolAvon.,

    Kiermasz, A
    process and application engineersprocess manager, Electrotech Special Research Systems Ltd., Thornbury LaboratoriesE.T. Plasma Developments Ltd., Unit la Oldmixon Cresent, Oldmixon Trading Estate, BristolAvon.,

    Stephens, MA
    process and application engineersprocess manager, Electrotech Special Research Systems Ltd., Thornbury LaboratoriesE.T. Plasma Developments Ltd., Unit la Oldmixon Cresent, Oldmixon Trading Estate, BristolAvon.,

    Harrington, SJ
    process and application engineersprocess manager, Electrotech Special Research Systems Ltd., Thornbury LaboratoriesE.T. Plasma Developments Ltd., Unit la Oldmixon Cresent, Oldmixon Trading Estate, BristolAvon.,

    McQuarrie, AD
    process and application engineersprocess manager, Electrotech Special Research Systems Ltd., Thornbury LaboratoriesE.T. Plasma Developments Ltd., Unit la Oldmixon Cresent, Oldmixon Trading Estate, BristolAvon.,

    Pages: 15    Published: Jan 1989


    Abstract

    During the fabrication of a GaAs monolithic microwave integrated circuit, there are a number of steps which necessitate the etching of GaAs, namely; mesa etching (for device isolation), gate recessing (to control the saturation current levels), substrate thinning for (transmission line impedance control), through substrate via holes (to reduce interconnection inductances) and scribe-line etching (for yield enhancement). Reproducible dry etch processes have been developed for these steps. However, the diversity of the process constraints imposed by these fabrication steps has led to a number of process operation regimes: for example, resulting in average etch rates ranging from less than 1000Å/min up to 10u/min for 2″ GaAs substrates. The process details are discussed with particular emphasis on the rate limiting steps and the factors governing the reactive gas/surface reaction rates.

    Keywords:

    plasma processing, dry etching, gallium arsenide


    Paper ID: STP26036S

    Committee/Subcommittee: F01.17

    DOI: 10.1520/STP26036S


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