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Dry Etching Techniques for MMIC Fabrication on GaAs Pages: 15 Published: Jan 1989
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View License Agreement Source: STP990-EB Abstract During the fabrication of a GaAs monolithic microwave integrated circuit, there are a number of steps which necessitate the etching of GaAs, namely; mesa etching (for device isolation), gate recessing (to control the saturation current levels), substrate thinning for (transmission line impedance control), through substrate via holes (to reduce interconnection inductances) and scribe-line etching (for yield enhancement). Reproducible dry etch processes have been developed for these steps. However, the diversity of the process constraints imposed by these fabrication steps has led to a number of process operation regimes: for example, resulting in average etch rates ranging from less than 1000Å/min up to 10u/min for 2″ GaAs substrates. The process details are discussed with particular emphasis on the rate limiting steps and the factors governing the reactive gas/surface reaction rates. Keywords: plasma processing, dry etching, gallium arsenide Paper ID: STP26036S Committee/Subcommittee: F01.17 DOI: 10.1520/STP26036S  ASTM International is a member of CrossRef. | ||