STP990

    Use of Polysilicon Deposition in a Cold-Wall LPCVD Reactor to Determine Wafer Temperature Uniformity

    Published: Jan 1989


      Format Pages Price  
    PDF (128K) 9 $25   ADD TO CART
    Complete Source PDF (6.8M) 9 $60   ADD TO CART


    Abstract

    In the Varian 5101 LPCVD reactor operating in a Rapid Thermal Processing (RTP) mode the wafer is heated directly by a radiant heater. The wafer temperature in this case is measured by a pyrometer pointing at its center. To obtain a temperature map of the entire wafer, we have developed and characterized a polysilicon deposition process. Using the polysilicon thickness as a “chemical thermometer” [1], we have been able to improve the radiant heater design to obtain a temperature uniformity of 0.2% across a 100 mm wafer and 0.5% on wafers up to 150 mm. As an example of application of our study, the optimized design was used to deposit selective tungsten with thickness uniformity of 4% across 140 mm scan on 150 mm wafer.

    Keywords:

    chemical thermometer, chemical vapor deposition, activation energy, polysilicon growth


    Author Information:

    Starov, V
    PresidentSenior Process Technician, Applied Photonics Research Inc.Varian Associates Inc., Redwood CityFremont, CACA

    Lane, L
    PresidentSenior Process Technician, Applied Photonics Research Inc.Varian Associates Inc., Redwood CityFremont, CACA


    Paper ID: STP26035S

    Committee/Subcommittee: F01.17

    DOI: 10.1520/STP26035S


    CrossRef ASTM International is a member of CrossRef.