STP990

    Accurate Junction-Depth Measurements Using Chemical Staining

    Published: Jan 1989


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    Abstract

    The techniques of chemical staining, spreading resistance, and secondary-ion mass spectrometry (SIMS) have been used in the determination of the depth of diffused and ion-implanted junctions in an effort to estimate the accuracy of the staining method. Computer simulations were also used to study the behaviour of charge carriers in the semiconductor under illumination, and the accuracy of the junction depth obtained from raw spreading resistance data. It was observed that it is possible to measure junction depth reproducibly, to within 200 Å of the metallurgical junction depth, by carefully controlling the surface preparation of the sample and the lighting conditions under which the staining takes place.

    Keywords:

    chemical staining, junction depth, spreading resistance, SIMS


    Author Information:

    Subrahmanyan, R
    Duke University, Durham, North Carolina

    Massoud, HZ
    Duke University, Durham, North Carolina

    Fair, RB
    Duke University, Durham, North Carolina


    Paper ID: STP26034S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP26034S


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