STP990

    Spreading Resistance Profiles in Gallium Arsenide

    Published: Jan 1989


      Format Pages Price  
    PDF Version (224K) 17 $25   ADD TO CART
    Complete Source PDF (6.8M) 17 $60   ADD TO CART


    Abstract

    The spreading resistance technique is widely used for profiling carrier concentration and resistivity in a variety of silicon structures. Several authors have reported some success in applying the spreading resistance technique to profiling doped GaAs samples. However, the use of spreading resistance measurements on GaAs is not widespread. The primary reasons for this are experimental problems with sample surface preparation and the very high values of contact resistance found in point contacts to GaAs. This paper details modifications to the spreading resistance technique to obtain reproducible and stable results on a variety of GaAs structures. It also discusses the current limits of such measurements.

    Keywords:

    Spreading resistance, gallium arsenide, resistivity profiling, dopant profiles, bevel sample preparation


    Author Information:

    Mazur, RG
    PresidentSenior Engineer, Solid State Measurements Inc., Pittsburgh, PA

    Hillard, RJ
    PresidentSenior Engineer, Solid State Measurements Inc., Pittsburgh, PA


    Paper ID: STP26032S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP26032S


    CrossRef ASTM International is a member of CrossRef.