SEDL / STP / STP990-EB / STP26032S

Spreading Resistance Profiles in Gallium Arsenide

Mazur, RG
PresidentSenior Engineer, Solid State Measurements Inc., Pittsburgh, PA

Hillard, RJ
PresidentSenior Engineer, Solid State Measurements Inc., Pittsburgh, PA

Pages: 17    Published: Jan 1989

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Abstract

The spreading resistance technique is widely used for profiling carrier concentration and resistivity in a variety of silicon structures. Several authors have reported some success in applying the spreading resistance technique to profiling doped GaAs samples. However, the use of spreading resistance measurements on GaAs is not widespread. The primary reasons for this are experimental problems with sample surface preparation and the very high values of contact resistance found in point contacts to GaAs. This paper details modifications to the spreading resistance technique to obtain reproducible and stable results on a variety of GaAs structures. It also discusses the current limits of such measurements.