SYMPOSIA PAPER Published: 01 January 1989
STP26032S

Spreading Resistance Profiles in Gallium Arsenide

Source

The spreading resistance technique is widely used for profiling carrier concentration and resistivity in a variety of silicon structures. Several authors have reported some success in applying the spreading resistance technique to profiling doped GaAs samples. However, the use of spreading resistance measurements on GaAs is not widespread. The primary reasons for this are experimental problems with sample surface preparation and the very high values of contact resistance found in point contacts to GaAs. This paper details modifications to the spreading resistance technique to obtain reproducible and stable results on a variety of GaAs structures. It also discusses the current limits of such measurements.

Author Information

Mazur, RG
Hillard, RJ
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 96–112
DOI: 10.1520/STP26032S
ISBN-EB: 978-0-8031-5107-9
ISBN-13: 978-0-8031-1273-5