STP990: Softening of Si and GaAs During Thermal Process

    Suga, H
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Ichizawa, M
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Endo, K
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Tomizawa, K
    manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

    Pages: 11    Published: Jan 1989


    Abstract

    Semiconductor materials for highly integrated circuit devices need the resistance for the slippage during thermal process to prevent the defect induced degradation. Temperature dependence of strength of cz-Si and pcz-GaAs was investigated by micro-Vickers hardness tester. Hardness of cz-Si wafers lowers sharply with testing temperature and with precipitated oxygen content. Hardness of pcz-GaAs wafers starts to decrease at a temperature about 400°C lower than is the case for Si wafers. Dopant content dependence of hardness between 600 and 700°C was not observed in Si doped or Zn doped pcz-GaAs wafers.

    Keywords:

    silicon wafer, gallium arsenide, high temperature hardness, thermal process, solid solution hardening, oxygen precipitation


    Paper ID: STP26028S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26028S


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