SEDL / STP / STP990-EB / STP26028S


Softening of Si and GaAs During Thermal Process

Suga, H
manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

Ichizawa, M
manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

Endo, K
manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,

Tomizawa, K
manager and submanager at material testing research lab.manager at gallium arsenide divisionmanager, Central Research InstituteCompound Semiconductor Center, Mitsubishi Metal Co.R & D center of Japan Silicon Co., OmiyaNoda,


Pages: 11    Published: Jan 1989


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Source: STP990-EB


Abstract

Semiconductor materials for highly integrated circuit devices need the resistance for the slippage during thermal process to prevent the defect induced degradation. Temperature dependence of strength of cz-Si and pcz-GaAs was investigated by micro-Vickers hardness tester. Hardness of cz-Si wafers lowers sharply with testing temperature and with precipitated oxygen content. Hardness of pcz-GaAs wafers starts to decrease at a temperature about 400°C lower than is the case for Si wafers. Dopant content dependence of hardness between 600 and 700°C was not observed in Si doped or Zn doped pcz-GaAs wafers.


Keywords:
silicon wafer, gallium arsenide, high temperature hardness, thermal process, solid solution hardening, oxygen precipitation

Paper ID: STP26028S
Committee/Subcommittee: F01.06
DOI: 10.1520/STP26028S
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