SEDL / STP / STP990-EB / STP26027S

Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

Robinson, MD
Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA

Lawrence, LH
Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA

Pages: 13    Published: Jan 1989

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Abstract

A new single wafer epitaxial silicon reactor, the Epsilon One, is characterized by automated cassette-to-cassette wafer handling, rapid thermal cycle, and high deposition rate for wafers up to 150 mm diameter. This paper describes the reactor, and its results in terms of epi thickness and doping uniformity, epi/substrate transition width, and epi defect density.