STP990: Characterization of High Growth Rate Epitaxial Silicon from a New Single Wafer Reactor

    Robinson, MD
    Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA

    Lawrence, LH
    Manager of R&DPresident, ASM EpitaxyLawrence Semiconductor Laboratories, TempeSan Jose, AZCA

    Pages: 13    Published: Jan 1989


    Abstract

    A new single wafer epitaxial silicon reactor, the Epsilon One, is characterized by automated cassette-to-cassette wafer handling, rapid thermal cycle, and high deposition rate for wafers up to 150 mm diameter. This paper describes the reactor, and its results in terms of epi thickness and doping uniformity, epi/substrate transition width, and epi defect density.

    Keywords:

    silicon epitaxy, single wafer reactor, uniformity, autodoping, defects, edge crown


    Paper ID: STP26027S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP26027S


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