STP960: Qualification of GaAs and AlGaAs by Optical and Surface Analysis Techniques

    Black, JF
    members of the research staff, United Technologies Research Center, East Hartford, CT

    Berak, JM
    members of the research staff, United Technologies Research Center, East Hartford, CT

    Peterson, GG
    members of the research staff, United Technologies Research Center, East Hartford, CT

    Pages: 22    Published: Jan 1987


    Abstract

    Optical techniques, including photoluminescence and infrared spectroscopies, have been investigated as a means of evaluating GaAs and AlGaAs wafers. Methods of surface analysis such as Auger Electron Spectroscopy and X-Ray Photoelectron Spectroscopy were used to support the optical measurements, as well as provide additional information, in the following areas: (1) evaluation of semi-insulating GaAs (a) by room temperature photoluminescence that showed strong intensity variations on a microscopic scale, suggestive of corresponding variations in semi-insulating properties, and (b) by low temperature photoluminescence that revealed substantial differences in carbon content in wafers with essentially the same resistivity; (2) self-quenching of the band-gap photoluminescence in GaAs at room temperature that appears to be connected with the formation and thickening of native oxide layers; (3) monitoring the course of post-implant annealing of Be-implanted GaAs and AlGaAs by measurements of photoluminescence at room temperature; (4) qualification of photoluminescence as an accurate means for determining composition in AlGaAs layers with aluminum content up to 0.58 mole fraction.

    Keywords:

    GaAs, AlGaAs, photoluminescence and quenching, infrared spectroscopy, Be-implants, surface analysis


    Paper ID: STP25797S

    Committee/Subcommittee: F01.19

    DOI: 10.1520/STP25797S


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