SEDL / STP / STP960-EB / STP25796S

Applications of x-ray Fluorescence Analysis to the Thin Layer on Silicon Wafers

Shiraiwa, T
research scientistsresearch scientistsresearch scientists, Osaka Titanium Co.Kyushu Electric Metal Co.Rigaku Industrial Co., HyogoSagaTakatsuki, Osaka,

Ochiai, T
research scientistsresearch scientistsresearch scientists, Osaka Titanium Co.Kyushu Electric Metal Co.Rigaku Industrial Co., HyogoSagaTakatsuki, Osaka,

Sano, M
research scientistsresearch scientistsresearch scientists, Osaka Titanium Co.Kyushu Electric Metal Co.Rigaku Industrial Co., HyogoSagaTakatsuki, Osaka,

Tada, Y
research scientistsresearch scientistsresearch scientists, Osaka Titanium Co.Kyushu Electric Metal Co.Rigaku Industrial Co., HyogoSagaTakatsuki, Osaka,

Arai, T
research scientistsresearch scientistsresearch scientists, Osaka Titanium Co.Kyushu Electric Metal Co.Rigaku Industrial Co., HyogoSagaTakatsuki, Osaka,

Pages: 13    Published: Jan 1987

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Abstract

Thin layered materials on silicon wafer were analyzed with X-ray fluorescent spectrometer which is specially designed for the analysis of semiconductor devices. The spectrochemical analysis using hard X-rays (22Ti - 92U) can be applied to the thicker layered materials (0.5 – 50µm). By soft and ultrasoft X-rays (5B - 21Sc), thinner layered materials (0 – 2µm) can be analyzed for the determination of concentration of layered material and film thickeness. In analysis of SiO2 Layer, the intensity of O-Kα X-ray was measured and the thickness was calculated by the theoretical approach. The precision of measurement is a few percent and it can distinguish the difference of natural oxide according to the cleaning method. Other experimental results of typical silicon wafer samples are informed; which are the analysis of NSG, PSG, BPSG, metal and alloy films, and As or P implanted elements.