STP960

    Analysis of Boron Profiles As Determined by Secondary Ion Mass Spectrometry, Spreading Resistance, and Process Modeling

    Published: Jan 1987


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    Abstract

    A controlled experiment was performed for a comparative investigation of dopant profiles by secondary ion mass spectrometry (SIMS), spreading resistance (SR), and process modeling. Boron profiles of varying junction depth were considered. These profiles were generated by boron ion implantation in n-type silicon and by varying the subsequent drive-in times. There has been emphasis on the quantification of the day-to-day repeatability of both SIMS and SR techniques and their comparison to process modeling. SUPREM III process simulator was used to generate the modeling profiles. Statistical regression analysis techniques were utilized to characterize the measured dopant profiles. Although there are distinct differences between the profiles determined by SIMS, SR, and Process Modeling, some consistent relationships, as for junction depth, are shown.

    Keywords:

    secondary ion mass spectrometry, spreading resistance, process modeling, boron, junction depth, dopant profiles


    Author Information:

    Banke, GW
    engineers/scientists, IBM Corporation, Essex Junction, VT

    Varahramyan, K
    engineers/scientists, IBM Corporation, Essex Junction, VT

    Slusser, GJ
    engineers/scientists, IBM Corporation, Essex Junction, VT


    Paper ID: STP25790S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25790S


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