Published: Jan 1987
| ||Format||Pages||Price|| |
|PDF (388K)||27||$25||  ADD TO CART|
|Complete Source PDF (9.4M)||27||$70||  ADD TO CART|
Spreading Resistance is the most versatile electrical technique for characterizing depth profiles in silicon. However, it is being increasingly challenged as an analytical method by shrinking device geometries. Consequently, refinement of such aspects as probe conditioning, sample preparation, and bevel angle measurement is needed, and traditional practice regarding calibration, algorithms, and profile interpretation must be reexamined. Based on examples drawn from the author's work, multilaboratory experiments, and recent literature to illustrate and discuss these topics, this paper attempts to summarize the current status of the measurement and its interpretation showing both strong points and apparent limitations.
depth profiling, dopant profiling, ion implantation, silicon, spreading resistance
Physicist, National Bureau of Standards, Gaithersburg, MD