STP960

    Semiconductor Yield Enhancement Through Particle Control

    Published: Jan 1987


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    Abstract

    Contamination control has always been an important part of semiconductor processing. Until recently, it has been fairly easy to control particles at the level necessary to obtain satisfactory LSI device yields, by requiring personnel to wear protective clothing and by filtering the room air. However, device geometries have shrunk to the point where a more sophisticated means of identifying and controlling particles is needed in order to fabricate working VLSI devices. We have developed a method for identifying, measuring, monitoring, and controlling particles in a cleanroom. This method involves the characterization of wafer fabrication defects with respect to process equipment, measurement of particles with an automatic wafer inspection system, defect monitoring over time through control charts, and the establishment of regular cleaning procedures.

    Keywords:

    Contamination control, particles, cleanroom, plasma etcher


    Author Information:

    Casper, ND
    Senior Engineer for maskmaking operationEngineer in plasma etch process development, Westinghouse Electric CorporationWestinghouse Electric Corporation, BaltimoreBaltimore, MarylandMaryland

    Soren, BW
    Senior Engineer for maskmaking operationEngineer in plasma etch process development, Westinghouse Electric CorporationWestinghouse Electric Corporation, BaltimoreBaltimore, MarylandMaryland


    Paper ID: STP25781S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP25781S


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