STP960

    Nature of Process-Induced Si-SiO2 Defects and Their Interaction with Illumination

    Published: Jan 1987


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    Abstract

    Transparent gate structures were fabricated by electron beam evaporation of Sn-doped In2O3 on oxidized p-Si substrates. The samples were oxidized at 1100°C in dry oxygen. No post-oxidation or post-electrode-deposition annealig was carried out. Admittance-voltage-frequency measurements were made under optical illumination. Interface state density distributions and hole and electron capture cross-sections were obtained using the recently developed optical metal-oxide-semiconductor (MOS) admittance technique. The experimental interface state density profile contained two peaked distributions, one near the valence band-edge Ev, and the other near the conduction band-edge Ec, overlying a concave background. The peak near Ec was sharper and the peak density was higher than in the case of the peak near Ev. The capture cross-section vs band-gap energy profile also displayed a peaked distribution for interface states under each of the peaks. With increasing illumination, the state density at the peak increased, the peak energy location moved closer to the respective band-edge, and the capture cross-section decreased. The experimental results show the presence of defects at unpassivated Si-SiO2 interfaces, which exchange electrons/holes with silicon bands under illumination.

    Keywords:

    optically-activated states, radiation damage, interface defects, silicon-oxide interface, MOS admittance


    Author Information:

    Kar, S
    senior research assistantProfessormember of the Electrical Engineering faculty, Indian Institute of Technology, Kanpur,

    Tewari, M
    senior research assistantProfessormember of the Electrical Engineering faculty, Indian Institute of Technology, Kanpur,


    Paper ID: STP25777S

    Committee/Subcommittee: F01.19

    DOI: 10.1520/STP25777S


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