SEDL / STP / STP960-EB / STP25776S

High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

Inoue, N
senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

Arai, T
senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

Nozaki, T
senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

Endo, K
senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

Mizuma, K
senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

Pages: 13    Published: Jan 1987

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Abstract

High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11×10¹⁷ atoms/cm³ and the accuracy is estimated to be within 4×10¹⁶ atoms/cm³. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5±0.9)×10¹⁶ atoms·cm⁻³/cm⁻¹.