STP960

    High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

    Published: Jan 1987


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    Abstract

    High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11×1017 atoms/cm3 and the accuracy is estimated to be within 4×1016 atoms/cm3. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5±0.9)×1016 atoms·cm−3/cm−1.

    Keywords:

    silicon, oxygen, carbon, infrared absorption, conversion coefficient, charged particle activation analysis


    Author Information:

    Inoue, N
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Arai, T
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Nozaki, T
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Endo, K
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Mizuma, K
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,


    Paper ID: STP25776S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25776S


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