STP960: High Reliability Infrared Measurements of Oxygen and Carbon in Silicon

    Inoue, N
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Arai, T
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Nozaki, T
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Endo, K
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Mizuma, K
    senior research engineerProfessorprincipal scientist, NTT Electrical Communications LaboratoriesInstitute of Applied Physics, Tsukuba UniversityInstitute of Physical and Chemical ResearchJapan Silicon Co. Ltd., Atsugi, KanagawaNiihari, IbaragiWako, SaitamaNoda, Chiba,

    Pages: 13    Published: Jan 1987


    Abstract

    High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11×1017 atoms/cm3 and the accuracy is estimated to be within 4×1016 atoms/cm3. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5±0.9)×1016 atoms·cm−3/cm−1.

    Keywords:

    silicon, oxygen, carbon, infrared absorption, conversion coefficient, charged particle activation analysis


    Paper ID: STP25776S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25776S


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