SEDL / STP / STP960-EB / STP25775S

Free Carrier Absorption and Interstitial Oxygen Measurements

Gladden, WK
electronics engineerphysicist, National Bureau of Standards, Gaithersburg, Maryland

Baghdadi, A
electronics engineerphysicist, National Bureau of Standards, Gaithersburg, Maryland

Pages: 12    Published: Jan 1987

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Abstract

The infrared (IR) absorption of n- and p-type silicon samples was measured over the concentration range ∼10¹⁵ to 6×10¹⁷ atoms/-cm⁻³. The free carrier absorption exhibited a power-law dependence on wavenumber. The data were fit to a logarithmic function with this dependence, and these results were applied to the determination of the baseline from which to compute the corrected net IR absorption at 1107 cm⁻¹ due to interstitial oxygen. Application of this correction for the free carrier absorption results in an improvement of 3% to 30% in the accuracy of the oxygen content determination at dopant concentrations above 10¹⁶ atoms/cm³.