STP960: Free Carrier Absorption and Interstitial Oxygen Measurements

    Gladden, WK
    electronics engineerphysicist, National Bureau of Standards, Gaithersburg, Maryland

    Baghdadi, A
    electronics engineerphysicist, National Bureau of Standards, Gaithersburg, Maryland

    Pages: 12    Published: Jan 1987


    Abstract

    The infrared (IR) absorption of n- and p-type silicon samples was measured over the concentration range ∼1015 to 6×1017 atoms/-cm−3. The free carrier absorption exhibited a power-law dependence on wavenumber. The data were fit to a logarithmic function with this dependence, and these results were applied to the determination of the baseline from which to compute the corrected net IR absorption at 1107 cm−1 due to interstitial oxygen. Application of this correction for the free carrier absorption results in an improvement of 3% to 30% in the accuracy of the oxygen content determination at dopant concentrations above 1016 atoms/cm3.

    Keywords:

    free carrier absorption, interstitial oxygen, infrared absorption, FT-IR, fourier transform infrared spectroscopy, intrinsic gettering, semiconductors, silicon, n-type silicon, p-type silicon


    Paper ID: STP25775S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25775S


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