STP960: Effect of Bulk Defects in Silicon on SiO2 Film Breakdown

    Suga, H
    manager at semiconductor divisionassociate manager at technical division, Central Research Institute, Mitsubishi Metal CorporationJapan Silicon Corp., OmiyaNoda,

    Murai, K
    manager at semiconductor divisionassociate manager at technical division, Central Research Institute, Mitsubishi Metal CorporationJapan Silicon Corp., OmiyaNoda,

    Pages: 17    Published: Jan 1987


    Abstract

    The origins of degrading the dielectric breakdown strength of silicon dioxide on silicon were analysed by controlling surface and bulk lattice defects and back side damage. As a result, two different mode of breakdown were observed. One is caused by lattice defects emerging on the silicon/silicon dioxide interface, but the degree of degradation in breakdown strength was only as much as 1 MV/cm. The other is due to low density of point like contamination. This kind of contamination was controlled with the gettering by lattice defects nearby the surface region.

    Keywords:

    defect in silicon, silicon oxide, dielectric breakdown, gettering, contamination


    Paper ID: STP25772S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25772S


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