SEDL / STP / STP960-EB / STP25772S

Effect of Bulk Defects in Silicon on SiO² Film Breakdown

Suga, H
manager at semiconductor divisionassociate manager at technical division, Central Research Institute, Mitsubishi Metal CorporationJapan Silicon Corp., OmiyaNoda,

Murai, K
manager at semiconductor divisionassociate manager at technical division, Central Research Institute, Mitsubishi Metal CorporationJapan Silicon Corp., OmiyaNoda,

Pages: 17    Published: Jan 1987

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Abstract

The origins of degrading the dielectric breakdown strength of silicon dioxide on silicon were analysed by controlling surface and bulk lattice defects and back side damage. As a result, two different mode of breakdown were observed. One is caused by lattice defects emerging on the silicon/silicon dioxide interface, but the degree of degradation in breakdown strength was only as much as 1 MV/cm. The other is due to low density of point like contamination. This kind of contamination was controlled with the gettering by lattice defects nearby the surface region.