STP960: Hydrogen in silicon and generation of haze on silicon surface in aging

    Shiraiwa, T
    executive technical counselorresearch scientist, Osaka Titanium Co.Kyushu Electric Metals Co., AmagasakiKohoku, Saga,

    Inenaga, S
    executive technical counselorresearch scientist, Osaka Titanium Co.Kyushu Electric Metals Co., AmagasakiKohoku, Saga,

    Pages: 11    Published: Jan 1987


    Abstract

    Hydrogen in silicon wafers was analysed by the gas analysis method of metals. Silicon wafers made by routine process contain a few ppm hydrogen. Diffusive hydrogen was observed in p-type silicon. It was proved that these hydrogen is absorbed into the wafer from water containing acid. The present results agree with current reports that hydrogen diffuses into p-type silicon and acts as a compensator of an acceptor.

    Haze which is observed on mirror polished surface of p-type silicon was investigated by SEM and ESCA, and they revealed that haze is due to scattering of light by nodules of silicon oxide which grow on the wafer sarface in density of 104/cm2. The present anthors suggest that oxidation is due to water formed by hydrogen which diffused out to the surface of wafer as well as moisture in the atmosphere.

    Keywords:

    Silicon Wafer, hydrogen analysis, haze, acceptor compensator, ESCA


    Paper ID: STP25767S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25767S


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