SEDL / STP / STP960-EB / STP25762S

Characterization of Silicon Surface Defects by the Laser Scanning Technique

Liaw, HM
senior member of the technical staff and section managerprincipal staff engineer and a manager for the epitaxial development programprocess engineer, Semiconductor Research and Development Labs (SRDL)Electronic Materials OperationSRDL, Motorola, Inc. Semiconductor Products Sector, Phoenix, Arizona

Rose, JW
senior member of the technical staff and section managerprincipal staff engineer and a manager for the epitaxial development programprocess engineer, Semiconductor Research and Development Labs (SRDL)Electronic Materials OperationSRDL, Motorola, Inc. Semiconductor Products Sector, Phoenix, Arizona

Nguyen, HT
senior member of the technical staff and section managerprincipal staff engineer and a manager for the epitaxial development programprocess engineer, Semiconductor Research and Development Labs (SRDL)Electronic Materials OperationSRDL, Motorola, Inc. Semiconductor Products Sector, Phoenix, Arizona

Pages: 16    Published: Jan 1987

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Abstract

The increase of circuit complexity in an IC chip has greatly increased the cost of processed wafers. The cost can be reduced if the defective wafers which cause the poor process yields can be screened prior to the wafer processing. Recent advanced in laser optics and data processing have made automatic laser scanners available. The laser scanners can be potentially used for 100% of the screening of incoming wafers and as a process control tool for certain steps of wafer processing. This paper reports (1) the correlation of defects detected by the laser scanner with the physical nature of defects, (2) utilization of the laser scanner for the characterization of process-induced defects, and (3) utilization of the laser scanner for monitoring substrate cleaning and epitaxial growth processes.