STP960: Quality Control and Optimization During Plasma Deposition of a-Si:H

    Kunst, M
    research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,

    Werner, A
    research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,

    Beck, G
    research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,

    Kuppers, U
    research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,

    Tributsch, H
    research scientistsProfessormember of the chairmen board of the Bereich Strahlenchemie, Hahn-Meitner-Institut fur Kernforschung Berlin, Berlin 39,

    Pages: 9    Published: Jan 1987


    Abstract

    It is shown that contactless time-resolved microwave conductivity (TRMC) measurements permit an in-process quality control during the plasma deposition of amorphous hydrogenated silicon (a-Si:H) films. The relation between the transient photoconductivity of the amorphous semiconductor and its quality is discussed. The influence of various parameters, such as the substrate temperature and chemical composition on the shape of the signals is explained in terms of charge carrier kinetics. An automated production process to yield quality films is presented to demonstrate the use of these measurements.

    Keywords:

    amorphous silicon, transient photoconductivity, quality control, automated production process, plasma deposition


    Paper ID: STP25754S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25754S


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