STP960: Rie Damage and Its Control in Silicon Processing

    Fonash, SJ
    Alumni Professor of Engineering SciencesAssociate Professor of Electrical Engineering, The Pennsylvania State UniversityGeorgia Institute of Technology, University ParkAtlanta, PAGA

    Rohatgi, A
    Alumni Professor of Engineering SciencesAssociate Professor of Electrical Engineering, The Pennsylvania State UniversityGeorgia Institute of Technology, University ParkAtlanta, PAGA

    Pages: 10    Published: Jan 1987


    Abstract

    Reactive ion etching (RIE) has become a necessary tool in much of silicon device manufacturing. When employing this important etching technique, one must be aware that its use can produce damage and contamination. The types of damage and contamination that can result from RIE are discussed for several etching chemistries. Control of RIE damage can be achieved by removing it by wet chemical etching or by furnace annealing. Control of RIE damage can also be achieved by hydrogen passivation or by the use of rapid thermal anneals. These latter techniques are of considerable interest since they are compatible with micron and submicron device geometries.

    Keywords:

    reactive ion etching, damage, contamination, damage control


    Paper ID: STP25749S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP25749S


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