STP960

    The Electrical Properties of MOS Transistors Fabricated with Direct Ion Beam Nitridation

    Published: Jan 1987


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    Abstract

    Direct ion beam nitridation was used to form a thin masking layer in the field oxide growth step. The resulting field oxide encroachment per device edge was reduced from 1.0 µm found in LOCOS devices to 0.33 µm. However, the transistors fabricated with the ion beam nitridation step displayed poor device characteristics. We found that with the growth of 50 nm of sacrificial oxide at 950°C and then subsequent removal of the oxide before the gate oxide growth, the adverse side effects, such as; low electron field effect mobility, high junction leakage current and low gate oxide breakdown strength can be drastically improved.

    Keywords:

    mobility, ion beam damage, surface roughness, MOS transistor


    Author Information:

    Lee, H-S
    senior staff research engineer, General Motors Research Labs., Warren, Michigan


    Paper ID: STP25748S

    Committee/Subcommittee: F01.15

    DOI: 10.1520/STP25748S


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