SEDL / STP / STP960-EB / STP25747S

Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators

Roberts, S
advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

Ryan, JG
advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

Martin, DW
advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

Pages: 13    Published: Jan 1987

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Abstract

Exploratory studies have been carried out with reactively sputtered thin films of several transition metal oxides and co-sputtered mixtures with SiO². Good insulation behavior is observed following postdeposition oxidation anneals. Best overall electrical properties are observed with mixtures of HfO² and SiO², in combination with additional layers of thermal SiO² and CVD Si³N⁴. Significant reduction in dielectric constant is observed with all the transition metal oxides with sub-30 nm films. High capacitance with stacks containing thermal SiO², mixtures of HfO² and SiO², and CVD Si³N⁴ may be due to a charge storage mechanism.