STP960: Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators

    Roberts, S
    advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

    Ryan, JG
    advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

    Martin, DW
    advisory engineerstaff engineersenior associate engineer, IBM Corporation, Essex Junction, Vermont

    Pages: 13    Published: Jan 1987


    Abstract

    Exploratory studies have been carried out with reactively sputtered thin films of several transition metal oxides and co-sputtered mixtures with SiO2. Good insulation behavior is observed following postdeposition oxidation anneals. Best overall electrical properties are observed with mixtures of HfO2 and SiO2, in combination with additional layers of thermal SiO2 and CVD Si3N4. Significant reduction in dielectric constant is observed with all the transition metal oxides with sub-30 nm films. High capacitance with stacks containing thermal SiO2, mixtures of HfO2 and SiO2, and CVD Si3N4 may be due to a charge storage mechanism.

    Keywords:

    thin films, dielectrics, insulators, sputtering


    Paper ID: STP25747S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP25747S


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