STP960

    Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance

    Published: Jan 1987


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    Abstract

    Shallow xenon ion implantations were performed into silicon wafers previously doped by BF2+ implantation and subsequent annealing. The major extended changes in the spreading resistance profile of the P-type doping, arising from the shallow xenon implantations, are presented here. A possible explanation of this effect on the electrical profile, based on “carrier spilling” described and analyzed by S.M. Hu (5) is presented.

    Keywords:

    Amorphization, Xenon ionic implantation, spreading resistance profile


    Author Information:

    Lora-Tamayo, E
    research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,

    Du Port de Pontcharra, J
    research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,

    Bruel, M
    research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,


    Paper ID: STP25744S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25744S


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