SEDL / STP / STP960-EB / STP25744S

Effect of a Shallow Xenon Implantation on a Profile Measured by Spreading Resistance

Lora-Tamayo, E
research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,

Du Port de Pontcharra, J
research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,

Bruel, M
research scientistresearch scientists, National Center of Microelectronics-CSIC, UAB BellaterraLETI-IRDI, CEA-CENC, BarcelonaGrenoble Cedex,

Pages: 11    Published: Jan 1987

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Abstract

Shallow xenon ion implantations were performed into silicon wafers previously doped by BF2+ implantation and subsequent annealing. The major extended changes in the spreading resistance profile of the P-type doping, arising from the shallow xenon implantations, are presented here. A possible explanation of this effect on the electrical profile, based on “carrier spilling” described and analyzed by S.M. Hu (5) is presented.