STP960

    Doped Oxide Spin-On Source Diffusion

    Published: Jan 1987


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    Abstract

    The advantages offered by doped oxide spin-on source diffusion are briefly out-lined from thermodynamic as well as techno-economic considerations. Diffusion characteristics are presented for spin-on sources of gallium, gallium with boron, gallium with arsenic, boron and phosphorus, keeping in view their potential applications. Sheet resistivity and doping profile measurements show that the dopant distributions which essentially exhibit a time varying surface concentration, cannot be explained by any of the existing models for solid-state diffusion available in the literature. With three specific examples it is shown how this technique can be employed for the fabrication of different types of semi-conductor devices. The investigations also show that the results of diffusion are independent of gas-flow rates as this type of diffusion dispenses with gas-solid interactions.

    Keywords:

    Silicon, diffusion, sheet-resistivity, spreading resistance, doping profile, junction-depth


    Author Information:

    Ramamurthy, V
    Senior Engineer, Bharat Heavy Electricals Limited, Vikasnagar, Hyderabad


    Paper ID: STP25743S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25743S


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