STP960

    Characterization of the in Situ HCl Etch for Epitaxial Silicon

    Published: Jan 1987


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    Abstract

    An experimental design strategy was used to characterize the in situ HCl etch used in the epitaxial silicon deposition and the selective epitaxial silicon processes. The dependence of the etch rate, haze and etch anisotropy is determined as a function of the HCl flow and etch temperature. Results show that temperatures less than 1025°C are the only limitation for the in situ HCl etch used in the epitaxial silicon process. Patterned oxide substrates which are used in a selective epi process show different etch rate and haze characteristics than unpatterned substrates. Etch anisotropy on the oxide patterned substrates limits the operational region for the selective epi process.

    Keywords:

    Epitaxial Silicon, High Temperature Vapor Etching, in situ, HCl Etch, Barrel Reactor, Haze, Etch Anisotropy, Etch Rate


    Author Information:

    Medernach, JW
    Member of the Technical StaffManager of MOS Development, Sandia National LaboratoriesSperry Univac, AlbuquerqueEagan, NMMN

    Wells, VA
    Member of the Technical StaffManager of MOS Development, Sandia National LaboratoriesSperry Univac, AlbuquerqueEagan, NMMN


    Paper ID: STP25742S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25742S


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