Published: Jan 1987
| ||Format||Pages||Price|| |
|PDF ()||14||$25||  ADD TO CART|
|Complete Source PDF (9.4M)||14||$70||  ADD TO CART|
An N-type epitaxial layers were grown over low resisitivity N-type substrate with and without pre-epi internal gettering (IG) cycle. Epitaxy was grown using either Silicon tetrachloride (SIL) or Silicon dichloride (DCS) at 1200° and 1100°C respectively. The epitaxial structures were characterized for as-grown microdefects and electrical characteristics (minority carrier lifetimes, breakdown voltage and C-t holdtime). The results indicate that epitaxial layers grown at a low growth rate and high temperature produced a minimum density of microdefects. These defects may further be reduced during subsequent thermal cycles especially with pre-epi IG-cycle. Consequently, electrical characteristics of epi layer were also improved.
Epitaxial growth, microdefects, internal gettering
Manager, Fairchild Semiconductors, Mountain View, CA