STP960

    Silicon Epitaxial Growth on N+ Substrate for CMOS Products

    Published: Jan 1987


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    Abstract

    An N-type epitaxial layers were grown over low resisitivity N-type substrate with and without pre-epi internal gettering (IG) cycle. Epitaxy was grown using either Silicon tetrachloride (SIL) or Silicon dichloride (DCS) at 1200° and 1100°C respectively. The epitaxial structures were characterized for as-grown microdefects and electrical characteristics (minority carrier lifetimes, breakdown voltage and C-t holdtime). The results indicate that epitaxial layers grown at a low growth rate and high temperature produced a minimum density of microdefects. These defects may further be reduced during subsequent thermal cycles especially with pre-epi IG-cycle. Consequently, electrical characteristics of epi layer were also improved.

    Keywords:

    Epitaxial growth, microdefects, internal gettering


    Author Information:

    Swaroop, RB
    Manager, Fairchild Semiconductors, Mountain View, CA


    Paper ID: STP25741S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25741S


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