STP960

    Thin Epitaxial Silicon by CVD

    Published: Jan 1987


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    Abstract

    Device applications for thin silicon epitaxy require sharp transition widths and uniform layers on wafers up to 200 mm diameter in production quantity. Uniform silicon epitaxy nominally 1 um thick deposited with transition widths of 0.2 – 0.3 µm over heavily doped buried layers using reduced pressure CVD technology are discussed. Both boron and arsenic buried layers can be accommodated in the 100 – 200 torr range. Thin selective epitaxy, with and without uniform polycrystalline silicon overgrowth on the oxide, is improved by reduced pressure deposition. Epitaxial lateral overgrowth is another technology based on thin epitaxy that is improved by reduced pressure CVD. Silicon-on-Sapphire requires very high growth rates at atmospheric pressure for very short times to achieve acceptable crystal quality. Some results for these thin epitaxy processes are reviewed.

    Keywords:

    silicon epitaxy, vertical reactor, transition width, autodoping, reduced pressure, silicon-on-sapphire


    Author Information:

    Fisher, SM
    Applications Laboratory ManagerVice-President of TetronSenior Applications Engineer, Gemini ResearchGemini ResearchGemini Research, Fremont, CA

    Hammond, ML
    Applications Laboratory ManagerVice-President of TetronSenior Applications Engineer, Gemini ResearchGemini ResearchGemini Research, Fremont, CA

    Sandler, NP
    Applications Laboratory ManagerVice-President of TetronSenior Applications Engineer, Gemini ResearchGemini ResearchGemini Research, Fremont, CA


    Paper ID: STP25739S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25739S


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