STP960: Thin Silicon Epitaxial Films Deposited at Low Temperatures

    Chang, H-R
    research engineerspecialist, General Electric Company, Research and Development Center, Schenectady, N.Y.

    Rosczak, JS
    research engineerspecialist, General Electric Company, Research and Development Center, Schenectady, N.Y.

    Pages: 9    Published: Jan 1987


    Abstract

    Specular epitaxial silicon layers have been successfully deposited on 3-inch wafers at 825°C using an atmospheric pressure chemical vapor deposition process. No plasma or high temperature etching is involved in this process. Predeposition cleaning of the substrate surface is the key to achieve epitaxial growth at this low temperature. Quantitative characterization of the low-temperature epitaxy quality has been performed by X-ray diffraction, UV reflectance, Hall mobility measurement, and diode breakdown measurement. All test results demonstrated that an epitaxy comparable to that of high temperature epitaxy has been achieved. This low temperature epitaxy process greatly reduces the out-diffusion and autodoping, thus leading to significant improvement in device dimension control.

    Keywords:

    silicon epitaxy, CVD, low temperature, surface cleaning


    Paper ID: STP25738S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP25738S


    CrossRef ASTM International is a member of CrossRef.