Published: Jan 1987
| ||Format||Pages||Price|| |
|PDF (48K)||3||$25||  ADD TO CART|
|Complete Source PDF (9.4M)||3||$70||  ADD TO CART|
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
silicon epitaxy, autodoping, channel mobility, buried layers
Associate Professor of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA