Published: Jan 1987
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This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
silicon epitaxy, autodoping, channel mobility, buried layers
Associate Professor of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA
Paper ID: STP25737S