Associate Professor of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA
Pages: 3 Published: Jan 1987
This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.
silicon epitaxy, autodoping, channel mobility, buried layers
Paper ID: STP25737S