SEDL / STP / STP960-EB / STP25737S

Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD

Reif, R
Associate Professor of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA

Pages: 3    Published: Jan 1987

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Abstract

This paper reviews the most recent results obtained using a very low pressure, plasma enhanced chemical vapor deposition technique for low temperature (650–800°C) silicon epitaxy. Initial results on autodoping studies and on p-n junctions and MOS transistors fabricated in these films are briefly discussed.