SYMPOSIA PAPER Published: 01 January 1990
STP24674S

Alternative Polarity Recombination Centers of Point Defects

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The conditions for the formation of alternative polarity recombination centers of point defects are discussed and their structure is investigated. The centers are shown to be stable point defect-impurity complexes that reverse the polarity while trapping free point defects. Having low mobility and a large trapping radius, these complexes may be efficient point-defect recombination centers. The experimental data are presented on the effect of rare earth elements on the recovery of the electrical resistivity and swelling of low alloyed nickel to support the existence of the recombination centers.

Author Information

Bakaj, AS
Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences, Kharkov, Union of Soviet Socialist Republics
Gann, VV
Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences, Kharkov, Union of Soviet Socialist Republics
Zelensky, VF
Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences, Kharkov, Union of Soviet Socialist Republics
Neklyudov, IM
Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences, Kharkov, Union of Soviet Socialist Republics
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Details
Developed by Committee: E10
Pages: 623–631
DOI: 10.1520/STP24674S
ISBN-EB: 978-0-8031-5112-3
ISBN-13: 978-0-8031-1266-7