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Alternative Polarity Recombination Centers of Point Defects

Bakaj, AS
Head of department, head of division, director of institute, and head of department,Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences,

Gann, VV
Head of department, head of division, director of institute, and head of department,Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences,

Zelensky, VF
Head of department, head of division, director of institute, and head of department,Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences,

Neklyudov, IM
Head of department, head of division, director of institute, and head of department,Kharhov Institute of Physics and Technology, Ukrainian SSR Academy of Sciences,

Pages: 9    Published: Jan 1990

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Source: STP1046-EB

Abstract

The conditions for the formation of alternative polarity recombination centers of point defects are discussed and their structure is investigated. The centers are shown to be stable point defect-impurity complexes that reverse the polarity while trapping free point defects. Having low mobility and a large trapping radius, these complexes may be efficient point-defect recombination centers. The experimental data are presented on the effect of rare earth elements on the recovery of the electrical resistivity and swelling of low alloyed nickel to support the existence of the recombination centers.

Keywords:
point defects, recombination, swelling, recovery, nickel alloys, rare-earth impurity, computer simulation

Paper ID: STP24674S
Committee/Subcommittee: E10.02
DOI: 10.1520/STP24674S
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