STP1175

    Microstructural and Microchemical Evolution During Fast Neutron Irradiation in Nickel and Nickel-Silicon Alloys Doped with Isotopically Controlled Boron

    Published: Jan 1994


      Format Pages Price  
    PDF (236K) 11 $25   ADD TO CART
    Complete Source PDF (27M) 11 $180   ADD TO CART


    Abstract

    Pure nickel and Ni-2wt%Si doped with several levels of boron- 10 (10B) and natural boron(nB) were irradiated in FFTF at 679, 793 and 873 K and 40 dpa, for the purpose of examining the applicability of. boron addition to the study of helium effects. The comparison of B and nB doped specimens showed that boron addition enhances cavity nucleation and growth via its transmutation effect and suppresses the nucleation via its chemical effect. Generally the transmutation effect was dominant at higher temperatures. In Ni-Si alloys, boron's chemical effect in suppressing the cavity density was stronger than that in pure nickel. Ni3Si precipitates were observed at 679 K but not at 793 and 873 K. Radiation-induced segregation of silicon at grain boundaries was most prominent at 793 K. The influence of boron addition on Ni3Si precipitation or the segregation of silicon is not yet clear.

    Keywords:

    nickel, nickel-silicon, helium effects, boron addition, void swelling, radiation-induced segregation


    Author Information:

    Muroga, T
    Associate professor, Reseach Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka,


    Paper ID: STP23981S

    Committee/Subcommittee: E10.08

    DOI: 10.1520/STP23981S


    CrossRef ASTM International is a member of CrossRef.