STP1141: Damage to InAs Surface from Long Pulse 10.6μm Laser Radiation

    Kovalev, VI
    Lebedev Physics Institute, USSR Academi of Sciences, Moscow,

    Pages: 5    Published: Jan 1991


    Abstract

    Laser induced damage to InAs — the material of interest for use as a nonlinear medium for the dinamic holography, phase conjugation etc. at 10.6μm — was studied. Damage thresholds of InAs surfaces both bare and antireflectin coated have been measured for single pulses of 20μs duration and beam spot diameter ⩾/0.5cm. The dependence of thresholds on the surface preparation procedure was found. The performed investigations of damaged sites with help of optical and scanning electron microscopes and X-ray microprobe analiser made evident that the surface heating leaded to the damage. The role of surface absorption and reflectivity are exposed.


    Paper ID: STP23657S

    Committee/Subcommittee: F01.11

    DOI: 10.1520/STP23657S


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