Oxygen Threshold for Ion-Bean Sputter Deposited Oxide Coatings

    Published: Jan 1986

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    Reactive ion-beam sputter deposition, using a mixed argon-oxygen beam, has been demonstrated to be an effective technique for fabrication of dense, amorphous TiO2, Ta2O5, and SiO2 coatings. For both elemental and oxide targets there is a critical level of oxygen in the beam necessary to produce stoichiometric films. This threshold is seen in the films' composition, refractive index, and optical band gap. With elemental targets there is a major reduction in deposition rate at the oxygen threshold, strongly implying that an oxide layer is formed on the target, and is subsequently sputtered onto the substrate.


    amorphous, ion beam, optical band gap, optical coatings, reactive sputtering, refractive index, silicon oxide, tantalum oxide, titanium oxide

    Author Information:

    Demiryont, H
    Colorado State University, Fort Collins, CO

    Sites, JR
    Colorado State University, Fort Collins, CO

    Committee/Subcommittee: F01.19

    DOI: 10.1520/STP23120S

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