STP1015

    Effects of Radiation Induced Defects on Laser-Induced Breakdown in SiO2

    Published: Jan 1988


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    Abstract

    The effects of radiation damage on bulk laser-induced breakdown in SiO2 were investigated. Samples studied included Spectrasil A, B, and WF (water free). Measurements of laser-induced breakdown were conducted with 532 and 1064 nm laser pulses of approximately 20 nsec duration. Reductions of up to 40% in the laser-induced breakdown threshold were observed at 532 nm for samples exposed to 108 rads of γ-radiation. The decrease in breakdown threshold for irradiated SiO2 samples at 532 nm was found to be proportional to the linear absorption of the specimen at 266 nm. These results are in good agreement with a proposed model which suggests that two-photon absorption initiated avalanche process is responsible for laser-induced breakdown for these materials.

    Keywords:

    laser-induced breakdown, nsec pulses, two-photon absorption, γ-irradiated SiO, 2, 1064 nm, 532 nm


    Author Information:

    Soileau, MJ
    Center for Applied Quantum Electronics Department of Physics North Texas State University, Denton, Texas

    Mansour, N
    Center for Applied Quantum Electronics Department of Physics North Texas State University, Denton, Texas

    Canto, E
    Center for Applied Quantum Electronics Department of Physics North Texas State University, Denton, Texas

    Griscom, DL
    Naval Research Laboratory, Washington, DC,


    Paper ID: STP18793S

    Committee/Subcommittee: F01.11

    DOI: 10.1520/STP18793S


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