STP1015

    Detection of Laser Damage by Raman Microscopy

    Published: Jan 1988


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    Abstract

    We demonstrate that Raman microscopy is a sensitive and quantitative tool to detect and characterize laser-induced damage in solids. After damage is induced with single or multiple high power laser pulses, a Raman microprobe maps the surface of the sample with one micron spatial resolution. By performing accurate measurements of the Stokes line, we have been able to measure stress, strain and crystallinity in various samples which had been exposed to high intensity pulses. These results are compared to those obtained using conventional tools such as Nomarski microscopy. Major advantages of Raman microscopy include sensitivity to subtle structural modifications and the fact that it gives quantitative measurements.

    Keywords:

    laser damage, Raman microscopy, silicon


    Author Information:

    Fauchet, PM
    Engineering Princeton University,

    Campbell, IH
    Engineering Princeton University,

    Adar, F
    Engineering Princeton University,


    Paper ID: STP18776S

    Committee/Subcommittee: E13.08

    DOI: 10.1520/STP18776S


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