SEDL / STP / STP1015-EB / STP18731S

Improvement of The Bulk Laser Damage Threshold of Potassium Dihydrogen Phosphate Crystals by Ultraviolet Irradiation

Yokotani, A
Institute of Laser Engineering, Osaka University, Suita. Osaka,

Sasaki, T
Institute of Laser Engineering, Osaka University, Suita. Osaka,

Yoshida, K
Institute of Laser Engineering, Osaka University, Suita. Osaka,

Yamanaka, T
Institute of Laser Engineering, Osaka University, Suita. Osaka,

Yamanaka, C
Institute of Laser Engineering, Osaka University, Suita. Osaka,

Pages: 7    Published: Jan 1988

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Abstract

Potassium dihydrogen phosphate (KDP)crystals were grown under the irradiation of ultraviolet light. The bulk laser damage threshold was improved two to three times (15 – 20 J/cm²) compared to the case of crystals grown by conventional methods. Microbes such as germs and bacteria are frequently generated in the KDP solution with the usual growth method, causing a low damage threshold. A main reason of the low damage threshold is due to the organic materials such as microbes or their carcass which are incorporated in the growing KDP crystals.