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Improvement of The Bulk Laser Damage Threshold of Potassium Dihydrogen Phosphate Crystals by Ultraviolet Irradiation
Yokotani, A
Institute of Laser Engineering, Osaka University,

Sasaki, T
Institute of Laser Engineering, Osaka University,

Yoshida, K
Institute of Laser Engineering, Osaka University,

Yamanaka, T
Institute of Laser Engineering, Osaka University,

Yamanaka, C
Institute of Laser Engineering, Osaka University,

Pages: 7    Published: Jan 1988

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Source: STP1015-EB

Abstract

Potassium dihydrogen phosphate (KDP)crystals were grown under the irradiation of ultraviolet light. The bulk laser damage threshold was improved two to three times (15 - 20 J/cm2) compared to the case of crystals grown by conventional methods. Microbes such as germs and bacteria are frequently generated in the KDP solution with the usual growth method, causing a low damage threshold. A main reason of the low damage threshold is due to the organic materials such as microbes or their carcass which are incorporated in the growing KDP crystals.

Keywords:
potassium dihydrogen phosphate, crystal, harmonic generation, high power laser, laser fusion, damage threshold, ultraviolet light, microbes, germs, bacteria, pasteurization, dissociation

Paper ID: STP18731S
Committee/Subcommittee: E13.01
DOI: 10.1520/STP18731S
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