STP1015: Improvement of The Bulk Laser Damage Threshold of Potassium Dihydrogen Phosphate Crystals by Ultraviolet Irradiation

    Yokotani, A
    Institute of Laser Engineering, Osaka University, Suita. Osaka,

    Sasaki, T
    Institute of Laser Engineering, Osaka University, Suita. Osaka,

    Yoshida, K
    Institute of Laser Engineering, Osaka University, Suita. Osaka,

    Yamanaka, T
    Institute of Laser Engineering, Osaka University, Suita. Osaka,

    Yamanaka, C
    Institute of Laser Engineering, Osaka University, Suita. Osaka,

    Pages: 7    Published: Jan 1988


    Abstract

    Potassium dihydrogen phosphate (KDP)crystals were grown under the irradiation of ultraviolet light. The bulk laser damage threshold was improved two to three times (15 – 20 J/cm2) compared to the case of crystals grown by conventional methods. Microbes such as germs and bacteria are frequently generated in the KDP solution with the usual growth method, causing a low damage threshold. A main reason of the low damage threshold is due to the organic materials such as microbes or their carcass which are incorporated in the growing KDP crystals.

    Keywords:

    potassium dihydrogen phosphate, crystal, harmonic generation, high power laser, laser fusion, damage threshold, ultraviolet light, microbes, germs, bacteria, pasteurization, dissociation


    Paper ID: STP18731S

    Committee/Subcommittee: E13.01

    DOI: 10.1520/STP18731S


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