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Beam Profiling Characteristics of a Sensitivity-Enhanced Silicon Vidicon System at 1.06 Microns
O'Connell, RM
University of Missouri, MO

Vogel, RA
University of Missouri, MO

Stewart, AF
University of Missouri, MO

Smith, DA
University of Missouri, MO

Pages: 9    Published: Jan 1988

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Source: STP1015-EB

Abstract

A beam profiling system consisting of a silicon vidicon detector and an image processing computer is described, and results of measurements to characterize the system are presented. For the transmission and display of geometrically accurate images, a unique relationship was found to exist between pixel clock frequency, channel time and channel length. The vidicon target's dark current and 1.06 μm detection sensitivity were found to have peak-to-peak variations of 5.6% and 3.75%, respectively, throughout the target's central 3.75 × 3.13 mm region. Signal-to-noise levels were optimum at a target temperature near 0° C. Without being optimized, cathode voltage switching improved the pulsed-mode dynamic range of the system to approximately 4.

Keywords:
beam profiling, dark current, detector target uniformity, dynamic range, transient response

Paper ID: STP18722S
Committee/Subcommittee: E13.03
DOI: 10.1520/STP18722S
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