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Beam Profiling Characteristics of a Sensitivity-Enhanced Silicon Vidicon System at 1.06 Microns


Pages: 9    Published: Jan 1988


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Source: STP1015-EB


Abstract

A beam profiling system consisting of a silicon vidicon detector and an image processing computer is described, and results of measurements to characterize the system are presented. For the transmission and display of geometrically accurate images, a unique relationship was found to exist between pixel clock frequency, channel time and channel length. The vidicon target's dark current and 1.06 μm detection sensitivity were found to have peak-to-peak variations of 5.6% and 3.75%, respectively, throughout the target's central 3.75 × 3.13 mm region. Signal-to-noise levels were optimum at a target temperature near 0° C. Without being optimized, cathode voltage switching improved the pulsed-mode dynamic range of the system to approximately 4.


Keywords:
beam profiling, dark current, detector target uniformity, dynamic range, transient response

Paper ID: STP18722S
Committee/Subcommittee: E13.03
DOI: 10.1520/STP18722S
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