STP1015

    Beam Profiling Characteristics of a Sensitivity-Enhanced Silicon Vidicon System at 1.06 Microns

    Published: Jan 1988


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    Abstract

    A beam profiling system consisting of a silicon vidicon detector and an image processing computer is described, and results of measurements to characterize the system are presented. For the transmission and display of geometrically accurate images, a unique relationship was found to exist between pixel clock frequency, channel time and channel length. The vidicon target's dark current and 1.06 μm detection sensitivity were found to have peak-to-peak variations of 5.6% and 3.75%, respectively, throughout the target's central 3.75 × 3.13 mm region. Signal-to-noise levels were optimum at a target temperature near 0° C. Without being optimized, cathode voltage switching improved the pulsed-mode dynamic range of the system to approximately 4.

    Keywords:

    beam profiling, dark current, detector target uniformity, dynamic range, transient response


    Author Information:

    O'Connell, RM
    University of Missouri, Columbia, MO

    Vogel, RA
    University of Missouri, Columbia, MO

    Stewart, AF
    University of Missouri, Columbia, MO

    Smith, DA
    University of Missouri, Columbia, MO


    Paper ID: STP18722S

    Committee/Subcommittee: E13.03

    DOI: 10.1520/STP18722S


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